Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744237
Title: Spatially resolved emitter saturation current by photoluminescence imaging
Authors: Hameiri, Z.
Chaturvedi, P. 
Juhl, M.K.
Trupke, T.
Keywords: Charge carrier lifetime
Photoluminescence
Photovoltaic cells
Silicon
Issue Date: 2013
Citation: Hameiri, Z.,Chaturvedi, P.,Juhl, M.K.,Trupke, T. (2013). Spatially resolved emitter saturation current by photoluminescence imaging. Conference Record of the IEEE Photovoltaic Specialists Conference : 664-668. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744237
Abstract: Heavily doped regions (in particular emitters) in silicon wafer solar cells are a major source of recombination which limits the open-circuit voltage, the short-circuit current and hence the efficiency. These regions are typically characterized by the emitter saturation current density, which is commonly calculated from the plot of the inverse effective lifetime (corrected for Auger recombination) as a function of minority carrier concentration. In this paper we present a simple spatially resolved emitter saturation current density measurement method which is based on photoluminescence imaging. The spatially averaged values obtained by the proposed method were found to be in a good agreement with the ones obtained by the standard photoconductance-based method. The application of the method to a selective emitter solar cell structure is demonstrated. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/117275
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744237
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