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|Title:||Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices||Authors:||Liu, J.
|Issue Date:||1-Aug-1998||Citation:||Liu, J.,Gornik, E.,Xu, S.,Zheng, H. (1998-08-01). Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices. Microelectronic Engineering 43-44 : 349-354. ScholarBank@NUS Repository.||Abstract:||Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. © 1998 Elsevier Science B.V. All rights reserved.||Source Title:||Microelectronic Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/117152||ISSN:||01679317|
|Appears in Collections:||Staff Publications|
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