Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4812835
Title: Imaging the local ideality factor by contactless photoluminescence measurement
Authors: Hameiri, Z.
Chaturvedi, P. 
McIntosh, K.R.
Issue Date: 8-Jul-2013
Citation: Hameiri, Z., Chaturvedi, P., McIntosh, K.R. (2013-07-08). Imaging the local ideality factor by contactless photoluminescence measurement. Applied Physics Letters 103 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4812835
Abstract: A contactless method to image the local ideality factor of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. The local ideality factor measured by the proposed method is found to be in good agreement with that measured by Suns-V oc. Examples of its application are given for fully and partially fabricated solar cells. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/117043
ISSN: 00036951
DOI: 10.1063/1.4812835
Appears in Collections:Staff Publications

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