Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/116534
DC FieldValue
dc.titlePreparation and investigation of GOI material by using smart-cut technology
dc.contributor.authorZhan, D.
dc.contributor.authorMa, X.-B.
dc.contributor.authorLiu, W.-L.
dc.contributor.authorZhu, M.
dc.contributor.authorSong, Z.-T.
dc.date.accessioned2014-12-12T07:51:02Z
dc.date.available2014-12-12T07:51:02Z
dc.date.issued2007-06
dc.identifier.citationZhan, D.,Ma, X.-B.,Liu, W.-L.,Zhu, M.,Song, Z.-T. (2007-06). Preparation and investigation of GOI material by using smart-cut technology. Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices 13 (3) : 207-212. ScholarBank@NUS Repository.
dc.identifier.issn10074252
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/116534
dc.description.abstractThe surface morphology of hydrogen implanted Ge wafers was investigated. Different from that of hydrogen implanted Si wafer, no obvious blisters were observed, but the whole top Ge layer departed from substrate. Germanium-on-insulator (GOI) materials have been fabricated successfully by using modified smart-cut technology, which includes moderate H+ dose implantation, special cleaning process of Ge wafer, low temperature wafer bonding and subsequent thermal treatment. Scanning electron microscope (SEM), atomic force microscope (AFM) and four-crystal X-ray diffraction have been used to characterize microstructure of GOI materials. The results demonstrate that the top Ge layer of GOI has good single crystal quality, and the interface between Ge and buried silicon dioxide is sharp and uniform.
dc.sourceScopus
dc.subjectBonding
dc.subjectGOI
dc.subjectSmart-cut
dc.typeArticle
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.sourcetitleGongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
dc.description.volume13
dc.description.issue3
dc.description.page207-212
dc.identifier.isiutNOT_IN_WOS
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