Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/116251
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dc.titleCharacterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry
dc.contributor.authorLiu, R.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorShen, D.H.
dc.contributor.authorTakenaka, H.
dc.date.accessioned2014-12-12T07:47:36Z
dc.date.available2014-12-12T07:47:36Z
dc.date.issued2004-02
dc.identifier.citationLiu, R.,Wee, A.T.S.,Shen, D.H.,Takenaka, H. (2004-02). Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry. Surface and Interface Analysis 36 (2) : 172-176. ScholarBank@NUS Repository.
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/116251
dc.description.abstractAchieving a high depth resolution (of the order of 1 nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. Well characterized reference materials are also important in accurate quantitative analysis of doping profiles. International Standard Organization (ISO)/Technique Commission (TC201)/Surface Chemical Analysis (SC6-SIMS) committees are engaged in the development of the international standardization of depth profiling of dopants in silicon using secondary ion mass spectrometry (SIMS). In this paper, the low-energy primary ion O2 + is employed in SIMS depth profiling of BN delta-doped Si samples grown by magnetron sputtering to achieve high depth resolution and minimize the surface roughening. The 11B+ and 30Si+ yields were monitored in the depth profiles. Profiling using a 0.5 keV energy O2 + beam is complicated by the early onset of surface roughening. The effects of oxygen flooding and sample rotation, used to suppress surface roughening, are also investigated. For analysis of the topography of the samples an atomic force microscope has been used. Copyright © 2004 John Wiley & Sons, Ltd.
dc.sourceScopus
dc.subjectB
dc.subjectDelta layers
dc.subjectSi
dc.subjectSIMS
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume36
dc.description.issue2
dc.description.page172-176
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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