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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2005.11.009
DC FieldValue
dc.titleXPS studies of room temperature magnetic Co-doped SnO2 deposited on Si
dc.contributor.authorYan, L.
dc.contributor.authorPan, J.S.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-12-12T07:35:34Z
dc.date.available2014-12-12T07:35:34Z
dc.date.issued2006-03-15
dc.identifier.citationYan, L., Pan, J.S., Ong, C.K. (2006-03-15). XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 128 (1-3) : 34-36. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.11.009
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/116033
dc.description.abstractFive atomic percentage Co-doped SnO2 (Sn0.95Co 0.05O2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn0.95Co 0.05O2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (ms) of 1.3 μB/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co 3+ and Co3+ through the oxygen vacancy. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.mseb.2005.11.009
dc.sourceScopus
dc.subjectCo-doped SnO2
dc.subjectDiluted magnetic semiconductor (DMS)
dc.subjectPulsed laser deposition (PLD)
dc.subjectXPS
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1016/j.mseb.2005.11.009
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume128
dc.description.issue1-3
dc.description.page34-36
dc.description.codenMSBTE
dc.identifier.isiut000236314500007
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