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|Title:||XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si||Authors:||Yan, L.
Diluted magnetic semiconductor (DMS)
Pulsed laser deposition (PLD)
|Issue Date:||15-Mar-2006||Citation:||Yan, L., Pan, J.S., Ong, C.K. (2006-03-15). XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 128 (1-3) : 34-36. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.11.009||Abstract:||Five atomic percentage Co-doped SnO2 (Sn0.95Co 0.05O2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn0.95Co 0.05O2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (ms) of 1.3 μB/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co 3+ and Co3+ through the oxygen vacancy. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/116033||ISSN:||09215107||DOI:||10.1016/j.mseb.2005.11.009|
|Appears in Collections:||Staff Publications|
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