XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2005.11.009

Title:	XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si
Authors:	Yan, L. Pan, J.S. Ong, C.K.
Keywords:	Co-doped SnO2 Diluted magnetic semiconductor (DMS) Pulsed laser deposition (PLD) XPS
Issue Date:	15-Mar-2006
Citation:	Yan, L., Pan, J.S., Ong, C.K. (2006-03-15). XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 128 (1-3) : 34-36. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.11.009
Abstract:	Five atomic percentage Co-doped SnO2 (Sn0.95Co 0.05O2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn0.95Co 0.05O2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (ms) of 1.3 μB/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co 3+ and Co3+ through the oxygen vacancy. © 2005 Elsevier B.V. All rights reserved.
Source Title:	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/116033
ISSN:	09215107
DOI:	10.1016/j.mseb.2005.11.009
Appears in Collections:	Staff Publications

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