Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.mseb.2005.11.009
Title: | XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si | Authors: | Yan, L. Pan, J.S. Ong, C.K. |
Keywords: | Co-doped SnO2 Diluted magnetic semiconductor (DMS) Pulsed laser deposition (PLD) XPS |
Issue Date: | 15-Mar-2006 | Citation: | Yan, L., Pan, J.S., Ong, C.K. (2006-03-15). XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 128 (1-3) : 34-36. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.11.009 | Abstract: | Five atomic percentage Co-doped SnO2 (Sn0.95Co 0.05O2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn0.95Co 0.05O2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (ms) of 1.3 μB/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co 3+ and Co3+ through the oxygen vacancy. © 2005 Elsevier B.V. All rights reserved. | Source Title: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/116033 | ISSN: | 09215107 | DOI: | 10.1016/j.mseb.2005.11.009 |
Appears in Collections: | Staff Publications |
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