Please use this identifier to cite or link to this item:
|Title:||Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study||Authors:||Xie, X.
|Issue Date:||1-Nov-2002||Citation:||Xie, X., Loh, K.P. (2002-11-01). Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study. Journal of Applied Physics 92 (9) : 5173-5176. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1509100||Abstract:||Silicon oxide ultrathin films grown on silicon carbide (6H-SiC) by plasma hydrogenation have been studied using ultrashallow depth profiling with time-of-flight secondary ion mass spectrometry. Plasma hydrogenation gives rise to an epitaxial 3 × 3 R30° silicate structure on 6H-SiC(0001) and 6H-SiC(0001̄). By selecting appropriate sputtering conditions, an ultrathin and atomically abrupt interface delineating the boundary between the silicate epilayer (SiO +,Si 2O +, and SiO 3 -,SiO 2 -) and bulk silicon carbide (SiC +) was observed on both C(0001̄) and Si(0001) faces. Differences in the sputtering profile between the C and Si faces suggest an enrichment of the interface stoichiometry by Si and O on the Si face. Our results support the structural models of the silicate on the C and Si-face 6H-SiC(0001) proposed by Starke [Appl. Phys. Lett. 74, 1084 (1999); J. Vac. Sci. Technol. A 17, 688 (1999)]. © 2002 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/116018||ISSN:||00218979||DOI:||10.1063/1.1509100|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 4, 2021
WEB OF SCIENCETM
checked on Feb 24, 2021
checked on Feb 27, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.