Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2160718

Title:	Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin films
Authors:	Zheng, Y.B. Wang, S.J. Huan, A.C.H. Tripathy, S. Chai, J.W. Kong, L.B. Ong, C.K.
Issue Date:	2006
Citation:	Zheng, Y.B., Wang, S.J., Huan, A.C.H., Tripathy, S., Chai, J.W., Kong, L.B., Ong, C.K. (2006). Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin films. Journal of Applied Physics 99 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2160718
Abstract:	We have investigated the effect of Ti and Mg dopants on the structural properties and band-gap energies of Ba0.5 Sr0.5 Ti O3 (BST) thin films grown on LaAl O3 substrates. The transmission spectra of these BST thin films measured by ultraviolet-visible spectrophotometer show that the band-gap energies are strongly dependent on the dopant concentration. Based on the structural analyses and theoretical calculation, the variation of the band-gap energies can be attributed to the combined effects of stress, grain size, and phase transformation in Ti- and Mg-doped BST thin films. © 2006 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/115605
ISSN:	00218979
DOI:	10.1063/1.2160718
Appears in Collections:	Staff Publications

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