Please use this identifier to cite or link to this item:
|Title:||Temperature dependence dynamical permeability characterization of magnetic thin film using near-field microwave microscopy||Authors:||Hung, L.T.
|Issue Date:||Aug-2011||Citation:||Hung, L.T., Phuoc, N.N., Wang, X.-C., Ong, C.K. (2011-08). Temperature dependence dynamical permeability characterization of magnetic thin film using near-field microwave microscopy. Review of Scientific Instruments 82 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3622850||Abstract:||A temperature dependence characterization system of microwave permeability of magnetic thin film up to 5 GHz in the temperature range from room temperature up to 423 K is designed and fabricated as a prototype measurement fixture. It is based on the near field microwave microscopy technique (NFMM). The scaling coefficient of the fixture can be determined by (i) calibrating the NFMM with a standard sample whose permeability is known; (ii) by calibrating the NFMM with an established dynamic permeability measurement technique such as shorted microstrip transmission line perturbation method; (iii) adjusting the real part of the complex permeability at low frequency to fit the value of initial permeability. The algorithms for calculating the complex permeability of magnetic thin films are analyzed. A 100 nm thick FeTaN thin film deposited on Si substrate by sputtering method is characterized using the fixture. The room temperature permeability results of the FeTaN film agree well with results obtained from the established short-circuited microstrip perturbation method. Temperature dependence permeability results fit well with the Landau-Lifshitz-Gilbert equation. The temperature dependence of the static magnetic anisotropy HK sta, the dynamic magnetic anisotropy H K dyn, the rotational anisotropy Hrot, together with the effective damping coefficient eff, ferromagnetic resonance f FMR, and frequency linewidth f of the thin film are investigated. These temperature dependent magnetic properties of the magnetic thin film are important to the high frequency applications of magnetic devices at high temperatures. © 2011 American Institute of Physics.||Source Title:||Review of Scientific Instruments||URI:||http://scholarbank.nus.edu.sg/handle/10635/115313||ISSN:||00346748||DOI:||10.1063/1.3622850|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 17, 2023
WEB OF SCIENCETM
checked on Jan 17, 2023
checked on Jan 26, 2023
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.