Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1616195
DC Field | Value | |
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dc.title | Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Tung, C.H. | |
dc.contributor.author | Tang, L.J. | |
dc.contributor.author | Lin, W.H. | |
dc.contributor.author | Radhakrishnan, M.K. | |
dc.date.accessioned | 2014-12-12T07:13:35Z | |
dc.date.available | 2014-12-12T07:13:35Z | |
dc.date.issued | 2003-10-06 | |
dc.identifier.citation | Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/115288 | |
dc.description.abstract | Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1616195 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | INSTITUTE OF MICROELECTRONICS | |
dc.description.doi | 10.1063/1.1616195 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 83 | |
dc.description.issue | 14 | |
dc.description.page | 2940-2942 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000185664000070 | |
Appears in Collections: | Staff Publications |
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