Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3673593
Title: Self-organized ZnO nanodot arrays: Effective control using SiN x interlayers and low-temperature plasmas
Authors: Huang, S.Y.
Cheng, Q.J.
Xu, S.
Wei, D.Y.
Zhou, H.P.
Long, J.D. 
Levchenko, I.
Ostrikov, K.
Issue Date: 1-Feb-2012
Citation: Huang, S.Y., Cheng, Q.J., Xu, S., Wei, D.Y., Zhou, H.P., Long, J.D., Levchenko, I., Ostrikov, K. (2012-02-01). Self-organized ZnO nanodot arrays: Effective control using SiN x interlayers and low-temperature plasmas. Journal of Applied Physics 111 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3673593
Abstract: An advanced inductively coupled plasma (ICP)-assisted rf magnetron sputtering deposition method is developed to synthesize regular arrays of pear-shaped ZnO nanodots on a thin SiN x buffer layer pre-deposited onto a silicon substrate. It is shown that the growth of ZnO nanodots obey the cubic root-law behavior. It is also shown that the synthesized ZnO nanodots are highly-uniform, controllable by the experimental parameters, and also feature good structural and photoluminescent properties. These results suggest that this custom-designed ICP-based technique is very effective and highly-promising for the synthesis of property- and size-controllable highly-uniform ZnO nanodots suitable for next-generation light emitting diodes, energy storage, UV nanolasers, and other applications. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/115280
ISSN: 00218979
DOI: 10.1063/1.3673593
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