Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.80.165325
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dc.titleAnisotropic optical spin Hall effect in semiconductor microcavities
dc.contributor.authorAmo, A.
dc.contributor.authorLiew, T.C.H.
dc.contributor.authorAdrados, C.
dc.contributor.authorGiacobino, E.
dc.contributor.authorKavokin, A.V.
dc.contributor.authorBramati, A.
dc.date.accessioned2014-12-12T07:09:47Z
dc.date.available2014-12-12T07:09:47Z
dc.date.issued2009-10-23
dc.identifier.citationAmo, A., Liew, T.C.H., Adrados, C., Giacobino, E., Kavokin, A.V., Bramati, A. (2009-10-23). Anisotropic optical spin Hall effect in semiconductor microcavities. Physical Review B - Condensed Matter and Materials Physics 80 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.80.165325
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114999
dc.description.abstractPropagating, directionally dependent, polarized spin currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of anisotropy results in suppression or enhancement of the pseudospin precession of polaritons scattered in specific directions. This is exploited to create intense spin currents by excitation on top of localized defects. A theoretical model considering the influence of the total effective magnetic field on the polariton pseudospin quantitatively reproduces the experimental observations. © 2009 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.80.165325
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCENTRE FOR QUANTUM TECHNOLOGIES
dc.description.doi10.1103/PhysRevB.80.165325
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume80
dc.description.issue16
dc.description.page-
dc.description.codenPRBMD
dc.identifier.isiut000271352100100
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