Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/21/6/018
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dc.titleAnalysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs
dc.contributor.authorCheah, W.K.
dc.contributor.authorFan, W.J.
dc.contributor.authorYoon, S.F.
dc.contributor.authorMa, B.S.
dc.contributor.authorNg, T.K.
dc.contributor.authorLiu, R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-12-12T07:09:43Z
dc.date.available2014-12-12T07:09:43Z
dc.date.issued2006-06-01
dc.identifier.citationCheah, W.K., Fan, W.J., Yoon, S.F., Ma, B.S., Ng, T.K., Liu, R., Wee, A.T.S. (2006-06-01). Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs. Semiconductor Science and Technology 21 (6) : 808-812. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/21/6/018
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114995
dc.description.abstractWe demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 °C for t = 20 s. © 2006 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0268-1242/21/6/018
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume21
dc.description.issue6
dc.description.page808-812
dc.description.codenSSTEE
dc.identifier.isiut000238433900020
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