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https://scholarbank.nus.edu.sg/handle/10635/114541
| Title: | An improved but reliable model for MESFET parasitic capacitance extraction | Authors: | Ooi, B.L. Ma, J.Y. |
Keywords: | Small Signal Equivalent Circuit | Issue Date: | 2003 | Citation: | Ooi, B.L.,Ma, J.Y. (2003). An improved but reliable model for MESFET parasitic capacitance extraction. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 567-570. ScholarBank@NUS Repository. | Abstract: | The conventional parasitic capacitance extraction always produces bias-dependent Cpd, even though from the underlying physic, the parasitic capacitance is known to be bias-independent. In this paper, an improved model is thus proposed to evaluate the parasitic capacitances of GaAs MESFET transistor from the cold-FET S-parameters measurement. The resulting Cpd is found to be independent of Vgs, when V gs | Source Title: | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers | URI: | http://scholarbank.nus.edu.sg/handle/10635/114541 |
| Appears in Collections: | Staff Publications |
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