A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2009.5159316

Title:	A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET
Authors:	Shen, C. Yang, L.T. Toh, E.-H. Heng, C.-H. Samudra, G.S. Yeo, Y.-C.
Issue Date:	2009
Citation:	Shen, C., Yang, L.T., Toh, E.-H., Heng, C.-H., Samudra, G.S., Yeo, Y.-C. (2009). A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 113-114. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159316
Abstract:	A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this abstract. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics. Application on T-FET is demonstrated. The physical origin of the saturation of Id-V d curve of T-FET is analyzed and clarified for the first time. ©2009 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/114537
ISBN:	9781424427857
DOI:	10.1109/VTSA.2009.5159316
Appears in Collections:	Staff Publications

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