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Title: Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x
Authors: Liu, H.F. 
Xiang, N. 
Tripathy, S.
Chua, S.J. 
Issue Date: 15-May-2006
Citation: Liu, H.F.,Xiang, N.,Tripathy, S.,Chua, S.J. (2006-05-15). Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x. Journal of Applied Physics 99 (10) : -. ScholarBank@NUS Repository.
Abstract: Using micro-Raman spectroscopy, we have investigated the vibrational properties of coherently strained Ga Nx As1-x alloys grown on GaAs (001) substrates by molecular beam epitaxy. The effect of compositional disorder in Ga Nx As1-x alloys has been studied by analyzing the broadening, asymmetry, and line shift of the first-order LO mode and nitrogen-induced localized vibration mode (NLVM). It is found that the line shape and peak shift of GaAs-like LO mode in Ga Nx As1-x can be well described by the spatial correlation model. We have also analyzed Raman spectra of Ga Nx As1-x alloys in the temperature range of 80-500 K. The intensity of GaAs-like LO phonon and NLVM decreases with temperature and the linewidth of both these modes shows substantial broadening at higher temperature. The temperature dependence of phonon linewidth and peak frequency of LO modes are analyzed in terms of anharmonic damping effect induced by thermal and compositional disorders. We have observed that the anharmonicity in Ga Nx As1-x is higher than that in GaAs, and increases with the N content in Ga Nx As1-x alloys. In addition, both thermal and compositional disorder-induced anharmonicities lead to an appreciable change of the LO phonon lifetime. These results obtained from Raman investigations would lead to a better understanding of the anharmonic effects in dilute nitrides. © 2006 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2203393
Appears in Collections:Staff Publications

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