Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/114519
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dc.titleNegative- U property of oxygen vacancy in cubic Hf O 2
dc.contributor.authorFeng, Y.P.
dc.contributor.authorLim, A.T.L.
dc.contributor.authorLi, M.F.
dc.date.accessioned2014-12-02T08:05:39Z
dc.date.available2014-12-02T08:05:39Z
dc.date.issued2005
dc.identifier.citationFeng, Y.P., Lim, A.T.L., Li, M.F. (2005). Negative- U property of oxygen vacancy in cubic Hf O 2. Applied Physics Letters 87 (6) : -. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114519
dc.description.abstractOxygen vacancy in cubic Hf O2 was investigated using first-principles calculation based on density functional theory and generalized gradient approximation. Five different charge states (V++, V+, V0, V-, and V - ) were investigated. It was found that the oxygen vacancy in Hf O2 has negative- U behavior and it is energetically favorable for the vacancy to trap two electrons or two holes when the respective charges are injected into the oxide, due to large electron-lattice interaction. Therefore, oxygen vacancy is a main source of charge traps in both n - and p -type metal-oxide-semiconductor field-effect transistors based on Hf O2, and reducing such defects will be useful in limiting charge trapping and in improving the quality of the high- k dielectric in modern complementary metal-oxide semiconductor technology. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2009826
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleApplied Physics Letters
dc.description.volume87
dc.description.issue6
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000231016900041
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