Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2004.037
DC FieldValue
dc.titleA two-step sol-gel method for synthesis of nanoporous TiO 2
dc.contributor.authorKartini, I.
dc.contributor.authorMeredith, P.
dc.contributor.authorZhao, X.S.
dc.contributor.authorDiniz Da Costa, J.C.
dc.contributor.authorLu, G.Q.
dc.date.accessioned2014-12-02T08:05:20Z
dc.date.available2014-12-02T08:05:20Z
dc.date.issued2004-03
dc.identifier.citationKartini, I., Meredith, P., Zhao, X.S., Diniz Da Costa, J.C., Lu, G.Q. (2004-03). A two-step sol-gel method for synthesis of nanoporous TiO 2. Journal of Nanoscience and Nanotechnology 4 (3) : 270-274. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2004.037
dc.identifier.issn15334880
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114487
dc.description.abstractThis article reports a study of the effects of synthesis parameters on the preparation and formation of mesoporous titania nanopowders by employing a two-step sol-gel method. These materials displayed crystalline domains characteristic of anatase. The first step of the process involved the hydrolysis of titanium isopropoxide in a basic aqueous solution mediated by neutral surfactant. The solid product obtained from step 1 was then treated in an acidified ethanol solution containing the same titanium precursor to thicken the pore walls. Low pH and higher loading of the Ti precursor in step 2 produced better mesoporosity and crystallinity of titanium dioxide polymorphs. The resultant powder exhibited a high surface area (73.8 m 2/g) and large pore volume (0.17 cm 3/g) with uniform mesopores. These materials are envisaged to be used as precursors for mesoporous titania films as a wide band gap semiconductor in dye-sensitized nanocrystalline TiO 2 solar cells.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/jnn.2004.037
dc.sourceScopus
dc.subjectAnatase Domains
dc.subjectMesoporous Titania
dc.subjectSol-Gel Technique
dc.subjectTitania Films
dc.subjectWide Band Gap Semiconductor
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1166/jnn.2004.037
dc.description.sourcetitleJournal of Nanoscience and Nanotechnology
dc.description.volume4
dc.description.issue3
dc.description.page270-274
dc.identifier.isiut000221751500011
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

16
checked on Aug 14, 2019

WEB OF SCIENCETM
Citations

13
checked on Aug 7, 2019

Page view(s)

71
checked on Aug 16, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.