Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2004.037
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dc.titleA two-step sol-gel method for synthesis of nanoporous TiO 2
dc.contributor.authorKartini, I.
dc.contributor.authorMeredith, P.
dc.contributor.authorZhao, X.S.
dc.contributor.authorDiniz Da Costa, J.C.
dc.contributor.authorLu, G.Q.
dc.date.accessioned2014-12-02T08:05:20Z
dc.date.available2014-12-02T08:05:20Z
dc.date.issued2004-03
dc.identifier.citationKartini, I., Meredith, P., Zhao, X.S., Diniz Da Costa, J.C., Lu, G.Q. (2004-03). A two-step sol-gel method for synthesis of nanoporous TiO 2. Journal of Nanoscience and Nanotechnology 4 (3) : 270-274. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2004.037
dc.identifier.issn15334880
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114487
dc.description.abstractThis article reports a study of the effects of synthesis parameters on the preparation and formation of mesoporous titania nanopowders by employing a two-step sol-gel method. These materials displayed crystalline domains characteristic of anatase. The first step of the process involved the hydrolysis of titanium isopropoxide in a basic aqueous solution mediated by neutral surfactant. The solid product obtained from step 1 was then treated in an acidified ethanol solution containing the same titanium precursor to thicken the pore walls. Low pH and higher loading of the Ti precursor in step 2 produced better mesoporosity and crystallinity of titanium dioxide polymorphs. The resultant powder exhibited a high surface area (73.8 m 2/g) and large pore volume (0.17 cm 3/g) with uniform mesopores. These materials are envisaged to be used as precursors for mesoporous titania films as a wide band gap semiconductor in dye-sensitized nanocrystalline TiO 2 solar cells.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/jnn.2004.037
dc.sourceScopus
dc.subjectAnatase Domains
dc.subjectMesoporous Titania
dc.subjectSol-Gel Technique
dc.subjectTitania Films
dc.subjectWide Band Gap Semiconductor
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1166/jnn.2004.037
dc.description.sourcetitleJournal of Nanoscience and Nanotechnology
dc.description.volume4
dc.description.issue3
dc.description.page270-274
dc.identifier.isiut000221751500011
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