Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3021091
Title: On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2 O3
Authors: Hoex, B. 
Gielis, J.J.H.
Van De Sanden, M.C.M.
Kessels, W.M.M.
Issue Date: 2008
Citation: Hoex, B., Gielis, J.J.H., Van De Sanden, M.C.M., Kessels, W.M.M. (2008). On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2 O3. Journal of Applied Physics 104 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3021091
Abstract: Al2 O3 is a versatile high- κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm-2 present in the Al2 O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2 O3 is especially beneficial for the passivation of p -type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2 O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/113248
ISSN: 00218979
DOI: 10.1063/1.3021091
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