Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0169-4332(02)00671-2
Title: SIMS backside depth profiling of ultra shallow implants
Authors: Yeo, K.L.
Wee, A.T.S. 
See, A.
Liu, R. 
Ng, C.M.
Keywords: Backside SIMS
Oxygen flooding
Sample rotation
Secondary ion mass spectrometry
Ultra shallow implants
Issue Date: 15-Jan-2003
Citation: Yeo, K.L., Wee, A.T.S., See, A., Liu, R., Ng, C.M. (2003-01-15). SIMS backside depth profiling of ultra shallow implants. Applied Surface Science 203-204 : 335-338. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(02)00671-2
Abstract: In secondary ion mass spectrometry depth profiling, a more accurate junction depth can be acquired by sputtering from the backside of the wafer [J. Vac. Sci. Technol. B 16 (1) (1998) 298]. This technique takes advantage of the better depth resolution of the leading edge as compared to the trailing edge [Nucl. Instrum. Meth. B 47 (1990) 223]. By using silicon-on-insulator (SOI) wafers, we have developed a backside depth profiling technique for studying ultra shallow implants. The abrupt interface of the SOI wafer and the large selectivity in chemical etching result in smooth after-etched surfaces, which facilitate high resolution SIMS profiling. The true dopant distribution of B 1keV implants was studied by performing front and backside depth profiling using SOI substrates. The 7.5 and 0.5 ke V O2 + primary ions were used at oblique incidence in a Cameca IMS-6f, with and without oxygen flooding and sample rotation. The effectiveness of backside SIMS profiling of the ultra shallow dopant implants using SOI substrates is evaluated. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/113117
ISSN: 01694332
DOI: 10.1016/S0169-4332(02)00671-2
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