Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0039-6028(03)00149-3
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dc.titleProbing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces
dc.contributor.authorPan, J.S.
dc.contributor.authorTok, E.S.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorLiu, R.S.
dc.contributor.authorChai, J.W.
dc.contributor.authorOng, W.J.
dc.contributor.authorToh, K.C.
dc.date.accessioned2014-11-28T09:12:13Z
dc.date.available2014-11-28T09:12:13Z
dc.date.issued2003-06-10
dc.identifier.citationPan, J.S., Tok, E.S., Huan, C.H.A., Liu, R.S., Chai, J.W., Ong, W.J., Toh, K.C. (2003-06-10). Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces. Surface Science 532-535 : 639-644. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(03)00149-3
dc.identifier.issn00396028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113116
dc.description.abstractIn situ X-ray photoelectron spectroscopy (XPS) reveals that deposited Co atoms at room temperature react with Si at the growth front to form a thin "CoSi2-like" layer on both clean and hydrogen passivated Si(0 0 1) and Si(1 1 1) surfaces. Improvement in the silicides crystallinity upon annealing was characterised by an appreciable decrease in the full width at half maximum of the Co 2p3/2 XPS spectra and a shift in binding energy towards Co in the bulk CoSi2 crystal structure. Unlike the Si(0 0 1) substrate, the presence of hydrogen on the Si(1 1 1) surface appears to delay the decrease in the peak area ratio of Co 2p3/2/Si 2p as annealing temperatures increase. Ex situ surface morphology imaged by atomic force microscopy suggests a reduced adatom mobility on the Co/H-passivated Si surface compared to the Co/clean Si surface, as evidenced by a higher and smaller size CoSi2 islands density observed on Co deposited/H-terminated Si surfaces after annealing to 700 °C. © 2003 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0039-6028(03)00149-3
dc.sourceScopus
dc.subjectAtomic force microscopy
dc.subjectCobalt
dc.subjectDiffusion and migration
dc.subjectSilicides
dc.subjectX-ray photoelectron spectroscopy
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0039-6028(03)00149-3
dc.description.sourcetitleSurface Science
dc.description.volume532-535
dc.description.page639-644
dc.description.codenSUSCA
dc.identifier.isiut000183705900109
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