Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(02)02219-4
DC FieldValue
dc.titleDynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
dc.contributor.authorPrice, R.W.
dc.contributor.authorTok, E.S.
dc.contributor.authorLiu, R.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorWoods, N.J.
dc.contributor.authorZhang, J.
dc.date.accessioned2014-11-28T09:12:10Z
dc.date.available2014-11-28T09:12:10Z
dc.date.issued2003-04
dc.identifier.citationPrice, R.W., Tok, E.S., Liu, R., Wee, A.T.S., Woods, N.J., Zhang, J. (2003-04). Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface. Journal of Crystal Growth 251 (1-4) : 676-680. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(02)02219-4
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113113
dc.description.abstractThis paper reports on the study of the growth dynamics of Si and SiGe containing a small fraction of carbon from the hydrides of Si, Ge and methylsilane. Dynamic changes in the growth rate across heterojunctions show that the presence of carbon on the (0 0 1) surface of Si or SiGe supresses growth rate and the carbon concentration could not be changed abruptly at an interface due to the surface segregation of carbon during growth. Temperature programmed desorption of molecular hydrogen from the Si(0 0 1) surface with various adsorbates shows that the presence of carbon increases the barrier to the desorption of molecular hydrogen and reduces the sticking probability of disilane. Both effects may lead to a reduction in the growth rate but the disilane supply rate (flux) dependence of growth rate on clean and carbon containing Si(0 0 1) surface shows that the primary cause of the growth rate decrease is the reduced sticking probability under the growth conditions used. © 2002 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0022-0248(02)02219-4
dc.sourceScopus
dc.subjectA1. Adsorption
dc.subjectA1. Segregation
dc.subjectA3. Molecular beam epitaxy
dc.subjectB1. Germanium silicon alloys
dc.subjectB2. Semiconducting silicon compounds
dc.subjectB3. Heterojunction semiconductor device
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0022-0248(02)02219-4
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume251
dc.description.issue1-4
dc.description.page676-680
dc.description.codenJCRGA
dc.identifier.isiut000182179800126
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