Please use this identifier to cite or link to this item:
Title: Study of copper suicide retardation effects on copper diffusion in silicon
Authors: Lee, C.S.
Gong, H. 
Liu, R. 
Wee, A.T.S. 
Cha, C.L.
See, A.
Chan, L.
Issue Date: Oct-2001
Citation: Lee, C.S., Gong, H., Liu, R., Wee, A.T.S., Cha, C.L., See, A., Chan, L. (2001-10). Study of copper suicide retardation effects on copper diffusion in silicon. Journal of Applied Physics 90 (8) : 3822-3824. ScholarBank@NUS Repository.
Abstract: A B-buried layer with a dose of 1 × 1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper suicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this suicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.1343518
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jul 5, 2020


checked on Jun 19, 2020

Page view(s)

checked on Jun 27, 2020

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.