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https://doi.org/10.1063/1.1431435
| Title: | Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films | Authors: | Choi, W.K. Natarajan, A. Bera, L.K. Wee, A.T.S. Liu, Y.J. |
Issue Date: | 15-Feb-2002 | Citation: | Choi, W.K., Natarajan, A., Bera, L.K., Wee, A.T.S., Liu, Y.J. (2002-02-15). Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (4) : 2443-2448. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1431435 | Abstract: | The oxide growth of rf sputtered polycrystalline Si 1-xGe x films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si 0.61Ge 0.39 film mainly contained GeO 2 and the oxide contained Ge-O-Ge and Si-O-Ge bonds when grown on Si 0.73Ge 0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si 1-xGe x films with x | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/113098 | ISSN: | 00218979 | DOI: | 10.1063/1.1431435 |
| Appears in Collections: | Staff Publications |
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