Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1431435
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dc.titleRapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
dc.contributor.authorChoi, W.K.
dc.contributor.authorNatarajan, A.
dc.contributor.authorBera, L.K.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorLiu, Y.J.
dc.date.accessioned2014-11-28T09:11:59Z
dc.date.available2014-11-28T09:11:59Z
dc.date.issued2002-02-15
dc.identifier.citationChoi, W.K., Natarajan, A., Bera, L.K., Wee, A.T.S., Liu, Y.J. (2002-02-15). Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (4) : 2443-2448. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1431435
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113098
dc.description.abstractThe oxide growth of rf sputtered polycrystalline Si 1-xGe x films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si 0.61Ge 0.39 film mainly contained GeO 2 and the oxide contained Ge-O-Ge and Si-O-Ge bonds when grown on Si 0.73Ge 0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si 1-xGe x films with x
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1431435
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1431435
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume91
dc.description.issue4
dc.description.page2443-2448
dc.description.codenJAPIA
dc.identifier.isiut000173553800107
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