Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00056-2
DC FieldValue
dc.titlePhase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
dc.contributor.authorFeng, Z.C.
dc.contributor.authorYang, T.R.
dc.contributor.authorLiu, R.
dc.contributor.authorWee, T.S.A.
dc.date.accessioned2014-11-28T09:11:57Z
dc.date.available2014-11-28T09:11:57Z
dc.date.issued2002-02
dc.identifier.citationFeng, Z.C., Yang, T.R., Liu, R., Wee, T.S.A. (2002-02). Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition. Materials Science in Semiconductor Processing 5 (1) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00056-2
dc.identifier.issn13698001
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113096
dc.description.abstractZn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation. © 2002 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00056-2
dc.sourceScopus
dc.subjectInGaN
dc.subjectMOCVD
dc.subjectPhase separation
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S1369-8001(02)00056-2
dc.description.sourcetitleMaterials Science in Semiconductor Processing
dc.description.volume5
dc.description.issue1
dc.description.page39-43
dc.identifier.isiut000178682000009
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Jul 3, 2020

WEB OF SCIENCETM
Citations

8
checked on Jun 25, 2020

Page view(s)

55
checked on Jun 27, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.