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https://doi.org/10.1016/S1369-8001(02)00056-2
DC Field | Value | |
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dc.title | Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition | |
dc.contributor.author | Feng, Z.C. | |
dc.contributor.author | Yang, T.R. | |
dc.contributor.author | Liu, R. | |
dc.contributor.author | Wee, T.S.A. | |
dc.date.accessioned | 2014-11-28T09:11:57Z | |
dc.date.available | 2014-11-28T09:11:57Z | |
dc.date.issued | 2002-02 | |
dc.identifier.citation | Feng, Z.C., Yang, T.R., Liu, R., Wee, T.S.A. (2002-02). Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition. Materials Science in Semiconductor Processing 5 (1) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00056-2 | |
dc.identifier.issn | 13698001 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/113096 | |
dc.description.abstract | Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation. © 2002 Elsevier Science Ltd. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00056-2 | |
dc.source | Scopus | |
dc.subject | InGaN | |
dc.subject | MOCVD | |
dc.subject | Phase separation | |
dc.type | Article | |
dc.contributor.department | INSTITUTE OF ENGINEERING SCIENCE | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1016/S1369-8001(02)00056-2 | |
dc.description.sourcetitle | Materials Science in Semiconductor Processing | |
dc.description.volume | 5 | |
dc.description.issue | 1 | |
dc.description.page | 39-43 | |
dc.identifier.isiut | 000178682000009 | |
Appears in Collections: | Staff Publications |
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