Please use this identifier to cite or link to this item: https://doi.org/10.3390/ma3063642
Title: Ti-doped ZnO thin films prepared at different ambient conditions: Electronic structures and magnetic properties
Authors: Yong, Z.
Liu, T. 
Uruga, T.
Tanida, H.
Qi, D. 
Rusydi, A. 
Wee, A.T.S. 
Keywords: DMS
Ti
Vacancy
XAFS
ZnO
Issue Date: 2010
Citation: Yong, Z., Liu, T., Uruga, T., Tanida, H., Qi, D., Rusydi, A., Wee, A.T.S. (2010). Ti-doped ZnO thin films prepared at different ambient conditions: Electronic structures and magnetic properties. Materials 3 (6) : 3642-3653. ScholarBank@NUS Repository. https://doi.org/10.3390/ma3063642
Abstract: We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 μB/Ti. © 2010 by the authors.
Source Title: Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/113045
ISSN: 19961944
DOI: 10.3390/ma3063642
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