Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/112982
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dc.titleStructure of the breakdown spot during progressive breakdown of ultra-thin gate oxides
dc.contributor.authorPalumbo, F.
dc.contributor.authorLombardo, S.
dc.contributor.authorPey, K.L.
dc.contributor.authorTang, L.J.
dc.contributor.authorTung, C.H.
dc.contributor.authorLin, W.H.
dc.contributor.authorRadhakrishnan, M.K.
dc.contributor.authorFalci, G.
dc.date.accessioned2014-11-28T08:12:58Z
dc.date.available2014-11-28T08:12:58Z
dc.date.issued2004
dc.identifier.citationPalumbo, F.,Lombardo, S.,Pey, K.L.,Tang, L.J.,Tung, C.H.,Lin, W.H.,Radhakrishnan, M.K.,Falci, G. (2004). Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides. Annual Proceedings - Reliability Physics (Symposium) : 583-584. ScholarBank@NUS Repository.
dc.identifier.issn00999512
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/112982
dc.description.abstractThe structure of the breakdown spot during progressive breakdown (BD) of ultra-thin gate oxide was studied. The nMOSFETs were stressed at +4V. To study the physical structure of the BD spot during progressive BD, it is important to perform the analysis on small geometry devices, to facilitate the TEM analysis. It was shown that the progressive BD is the dominant BD mode under conditions in CMOS circuits. The MOSFET devices were subjected to accelerated stresses at constant voltage in inversion at room temperature.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleAnnual Proceedings - Reliability Physics (Symposium)
dc.description.page583-584
dc.description.codenARLPB
dc.identifier.isiutNOT_IN_WOS
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