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|Title:||Effect of oxide field on hot carrier induced degradation in CMOS gate oxide||Authors:||Zhao, S.P.
|Issue Date:||1995||Citation:||Zhao, S.P.,Taylor, S. (1995). Effect of oxide field on hot carrier induced degradation in CMOS gate oxide. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 91-95. ScholarBank@NUS Repository.||Abstract:||In this study, substrate hot electron injection (SHE) experiments have been carried out on n-MOSFETs. The effects of the oxide field on the hot electron induced degradation has been studied systematically. The oxide field dependence of the trapping over the field range from 0.5 to 6 MV/cm for different injection levels has been investigated.||Source Title:||Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/112976|
|Appears in Collections:||Staff Publications|
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