Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/112721
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dc.titleRbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates by liquid phase epitaxy
dc.contributor.authorShi, L.P.
dc.contributor.authorPun, E.Y.B.
dc.contributor.authorChung, P.S.
dc.date.accessioned2014-11-28T06:50:06Z
dc.date.available2014-11-28T06:50:06Z
dc.date.issued1997
dc.identifier.citationShi, L.P.,Pun, E.Y.B.,Chung, P.S. (1997). RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates by liquid phase epitaxy. Crystal Research and Technology 32 (4) : 597-603. ScholarBank@NUS Repository.
dc.identifier.issn02321300
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/112721
dc.description.abstractThe properties of RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z- face is discussed.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.sourcetitleCrystal Research and Technology
dc.description.volume32
dc.description.issue4
dc.description.page597-603
dc.description.codenCRTED
dc.identifier.isiutNOT_IN_WOS
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