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|Title:||Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy||Authors:||Xie, X.N.
|Issue Date:||10-Jan-2005||Citation:||Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2005-01-10). Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy. Applied Physics Letters 86 (2) : 023112-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846955||Abstract:||We report an investigation on the stress-induced breakdown (BD) in ultrathin oxide grown by atomic force microscopy (AFM oxide). A conducting atomic force microscopy (c-AFM) technique was employed to stress the AFM oxide and examine its BD behavior. It was found that thermal annealing has a strong impact on the dielectric strength of AFM oxide. The stress-induced trap generation probability, Pt, could be reduced by ~50% after annealing the oxide at elevated temperatures. Such a thermal effect is related to the local structural relaxation and trap state minimization in AFM oxide upon annealing. The spatially resolved current images allow a microscopic diagnosis of the distribution of BD sites: isolated single BD spots and laterally propagated BD areas were observed in an oxide dot. Soft and hard breakdown sites were also distinguished on the current images. © 2005 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/112651||ISSN:||00036951||DOI:||10.1063/1.1846955|
|Appears in Collections:||Staff Publications|
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