Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3242005
DC Field | Value | |
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dc.title | Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure | |
dc.contributor.author | Gao, X. | |
dc.contributor.author | Chen, S. | |
dc.contributor.author | Liu, T. | |
dc.contributor.author | Chen, W. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Nomoto, T. | |
dc.contributor.author | Yagi, S. | |
dc.contributor.author | Soda, K. | |
dc.contributor.author | Yuhara, J. | |
dc.date.accessioned | 2014-11-28T06:33:53Z | |
dc.date.available | 2014-11-28T06:33:53Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Gao, X., Chen, S., Liu, T., Chen, W., Wee, A.T.S., Nomoto, T., Yagi, S., Soda, K., Yuhara, J. (2009). Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure. Applied Physics Letters 95 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3242005 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/112648 | |
dc.description.abstract | The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si-Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 63×63R 30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC. © 2009 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3242005 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | SINGAPORE SYNCHROTRON LIGHT SOURCE | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1063/1.3242005 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 95 | |
dc.description.issue | 14 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000270670200104 | |
Appears in Collections: | Staff Publications |
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