Please use this identifier to cite or link to this item:
|Title:||Ferromagnetism in Cr doped In2O3||Authors:||Yi, J.B.
|Keywords:||Chromium doped indium oxide
Diluted magnetic semiconductors
Pulsed laser deposition
|Issue Date:||2013||Citation:||Yi, J.B., Bao, N.N., Luo, X., Fan, H.M., Liu, T., Li, S. (2013). Ferromagnetism in Cr doped In2O3. Thin Solid Films 531 : 481-486. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.01.040||Abstract:||In this work, we deposited 5%Ta-5%Cr-In2O3 film on LaAlO3(001) substrate as an example to investigate the effect of electron doping, oxygen partial pressure and thickness on the ferromagnetism. The ferromagnetism is strongly dependent on oxygen partial pressure. Films deposited under low oxygen partial pressure leads to the enhancement of ferromagnetism. However, the electron doping through Ta dopant has a limit influence on the magnetism, suggesting that the film may not be carrier-mediated. Through the X-ray magnetic circular dichroism study, no magnetic moment can be found in Cr, In and O edge, suggesting that the ferromagnetism may be originated from defects. Magnetoresistance and anomalous Hall effect can be observed at low temperature in the film deposited under low oxygen partial pressure. Hence, these two properties may not be as an indication of intrinsic ferromagnetism. © 2013 Elsevier B.V.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/112601||ISSN:||00406090||DOI:||10.1016/j.tsf.2013.01.040|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 16, 2019
WEB OF SCIENCETM
checked on Oct 8, 2019
checked on Oct 11, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.