Frequency-dependent behavior of optically illuminated HEMT

Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.1245

Title:	Frequency-dependent behavior of optically illuminated HEMT
Authors:	Yajian, H. Alphones, A.
Keywords:	HEMT Light modulation Photoconductive Photovoltaic
Issue Date:	20-Jul-2001
Citation:	Yajian, H.,Alphones, A. (2001-07-20). Frequency-dependent behavior of optically illuminated HEMT. Microwave and Optical Technology Letters 30 (2) : 138-142. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.1245
Abstract:	An analysis of the ac characteristics of an AlGaAs / GaAs HEMT under illumination with modulated light has been carried out for a small-signal condition. A new model for the photovoltage calculation is outlined. The effect of the signal frequency on the photoconductive current is evaluated; the results show that the photoconductive current is very small, and can be neglected in the calculation. The frequency dependence of the photovoltage along with the 2-DEG charge density, drain-source current and transconductance of the device have been studied analytically for an HEMI structure. © 2001 John Wiley & Sons. Inc.
Source Title:	Microwave and Optical Technology Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/112251
ISSN:	08952477
DOI:	10.1002/mop.1245
Appears in Collections:	Staff Publications

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