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|Title:||Frequency-dependent behavior of optically illuminated HEMT||Authors:||Yajian, H.
|Issue Date:||20-Jul-2001||Citation:||Yajian, H.,Alphones, A. (2001-07-20). Frequency-dependent behavior of optically illuminated HEMT. Microwave and Optical Technology Letters 30 (2) : 138-142. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.1245||Abstract:||An analysis of the ac characteristics of an AlGaAs / GaAs HEMT under illumination with modulated light has been carried out for a small-signal condition. A new model for the photovoltage calculation is outlined. The effect of the signal frequency on the photoconductive current is evaluated; the results show that the photoconductive current is very small, and can be neglected in the calculation. The frequency dependence of the photovoltage along with the 2-DEG charge density, drain-source current and transconductance of the device have been studied analytically for an HEMI structure. © 2001 John Wiley & Sons. Inc.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/112251||ISSN:||08952477||DOI:||10.1002/mop.1245|
|Appears in Collections:||Staff Publications|
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