Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/112247
DC Field | Value | |
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dc.title | Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs | |
dc.contributor.author | Rao, Rapeta V.V.V.J. | |
dc.contributor.author | Joe, J. | |
dc.contributor.author | Chia, Y.W.Michael | |
dc.contributor.author | Ang, K.S. | |
dc.contributor.author | Wang, H. | |
dc.contributor.author | Ng, G.I. | |
dc.date.accessioned | 2014-11-28T04:58:56Z | |
dc.date.available | 2014-11-28T04:58:56Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Rao, Rapeta V.V.V.J.,Joe, J.,Chia, Y.W.Michael,Ang, K.S.,Wang, H.,Ng, G.I. (1999). Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 892-895. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/112247 | |
dc.description.abstract | A simple and accurate method for extracting on and off state equivalent circuit for double heterojunction δ-doped PHEMTs was developed, which is quite useful for switching applications. The circuit elements are extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were determined from the on-wafer-short 8-parameter data. We have observed skin effect on the series resistive elements of on-wafer-short, which has been given due consideration in our model. The model has been verified by comparing the measured S-parameter data against those calculated from the on and off state equivalent circuits of PHEMTs. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CENTRE FOR WIRELESS COMMUNICATIONS | |
dc.description.sourcetitle | Asia-Pacific Microwave Conference Proceedings, APMC | |
dc.description.volume | 3 | |
dc.description.page | 892-895 | |
dc.description.coden | 280 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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