Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/18/7/101
Title: Amorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon
Authors: Yan, L. 
Kong, L.B. 
Li, Q.
Ong, C.K. 
Issue Date: Jul-2003
Citation: Yan, L., Kong, L.B., Li, Q., Ong, C.K. (2003-07). Amorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon. Semiconductor Science and Technology 18 (7) : L39-L41. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/7/101
Abstract: The electrical and physical characteristics of (CeO2)0.67(Al2O3)0.33 (CAO), for use in metal-oxide-semiconductor gate dielectric applications were investigated. The CAO thin films have been deposited at 650°C in different oxygen pressures by pulsed laser deposition. The CAO thin film was found to exhibit excellent characteristics such as atomic-scale smooth surface, thin interfacial layer, high accumulation capacitance and low leakage current density. This demonstrates that CAO thin film is a promising gate dielectric replacing SiO2 in future for its good physical and electrical properties.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/111657
ISSN: 02681242
DOI: 10.1088/0268-1242/18/7/101
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