Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1579127
Title: Role of oxygen pressure in growth of CeAIOx thin films on Si by pulsed laser deposition
Authors: Yan, L. 
Kong, L.B. 
Pan, J.S.
Ong, C.K. 
Issue Date: 1-Jul-2003
Citation: Yan, L., Kong, L.B., Pan, J.S., Ong, C.K. (2003-07-01). Role of oxygen pressure in growth of CeAIOx thin films on Si by pulsed laser deposition. Journal of Applied Physics 94 (1) : 594-597. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1579127
Abstract: A study was performed on the role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition. It was shown that with decreasing oxygen pressure, Ce4+ content decreased while Ce3+ content increased. It was found that the reduction of Ce4+ to Ce3+ compensated the oxygen deficit as a result of the decreased oxygen pressure.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/111479
ISSN: 00218979
DOI: 10.1063/1.1579127
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Jul 10, 2019

WEB OF SCIENCETM
Citations

3
checked on Jul 10, 2019

Page view(s)

55
checked on May 25, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.