Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1-xFexO3 (x=0-0.12) thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1358344

Title:	Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1-xFexO3 (x=0-0.12) thin films
Authors:	Huang, Q. Li, Z.W. Li, J. Ong, C.K.
Issue Date:	1-Jun-2001
Citation:	Huang, Q., Li, Z.W., Li, J., Ong, C.K. (2001-06-01). Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1-xFexO3 (x=0-0.12) thin films. Journal of Applied Physics 89 (11 II) : 7410-7412. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1358344
Abstract:	Polycrystalline La0.7Sr0.3Mn1-xFexO3 thin films, with x=0-0.12, have been prepared on (001)-Si substrates using pulsed laser deposition. The films consist of fine grains with an average size of 60-80 nm. For those films, the metal-insulator transition temperature, Tp, is much lower than the Curie temperature, TC. The high field magnetoresistance, HFMR, is nearly temperature independent for x
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/111373
ISSN:	00218979
DOI:	10.1063/1.1358344
Appears in Collections:	Staff Publications

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