Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/42/1/015501
DC FieldValue
dc.titleCharacterization of microwave dielectric properties of ferroelectric parallel plate varactors
dc.contributor.authorSheng, S.
dc.contributor.authorWang, P.
dc.contributor.authorZhang, X.Y.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-11-28T01:51:07Z
dc.date.available2014-11-28T01:51:07Z
dc.date.issued2009-01
dc.identifier.citationSheng, S., Wang, P., Zhang, X.Y., Ong, C.K. (2009-01). Characterization of microwave dielectric properties of ferroelectric parallel plate varactors. Journal of Physics D: Applied Physics 42 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/42/1/015501
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/111342
dc.description.abstractA procedure to accurately evaluate microwave dielectric properties of parallel plate varactors fabricated on a BST thin film deposited by pulsed laser deposition on a platinized silicon substrate is presented. The reliability of the high-frequency properties of dielectric thin films extracted from the measured reflection coefficient S11 is mainly limited by how accurately the parasitic effects are eliminated from the measured data. The parasitic effects were effectively removed on evaluating the thin-film dielectric properties based on the good agreement between the experimental results measured with the parasitic model and the computer simulation data. © 2009 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentTEMASEK LABORATORIES
dc.description.doi10.1088/0022-3727/42/1/015501
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume42
dc.description.issue1
dc.description.page-
dc.description.codenJPAPB
dc.identifier.isiut000261761800067
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