Contact and source/drain engineering for advanced III-V field-effect transistors

Abstract

Aggressively scaled gate length and high carrier mobility result in low channel resistance in advanced III-V MOSFETs, which requires parasitic resistances to be low to ensure that they do not limit drive current performance. Parasitic resistances are also a concern for FinFETs and NWFETs due to their narrow fins and small nanowire diameters. Therefore, contact technologies that can provide good ohmic contacts with low contact resistivity, and doping techniques that can provide abrupt, high-quality, ultra-shallow junctions with high doping concentration and conformal doping in the source/drain (S/D) and S/D extension regions, are required for advanced three-dimensional (3D) III-V MOSFETs.

In this thesis, salicide-like contact metallization is explored for InGaAs n-MOSFETs, and simulations are used to determine the importance of such self-aligned contact metallization and the contact resistivity required at advanced technology nodes. Novel doping techniques are also developed to meet the necessary requirements for advanced 3D InGaAs n-MOSFETs.