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|Title:||Transmission electron microscopy of defects in NMOS and PMOS structures||Authors:||Bourdillon, A.J.
|Issue Date:||1997||Citation:||Bourdillon, A.J., Koh, Y.G., Chiang, S.L., Lim, C.W., Kong, J.R., Cao, G. (1997). Transmission electron microscopy of defects in NMOS and PMOS structures. Proceedings of SPIE - The International Society for Optical Engineering 3183 : 236-242. ScholarBank@NUS Repository. https://doi.org/10.1117/12.280546||Abstract:||Decreasing dimensions in integrated circuits impose increasing demands in processing. Among requirements are reduced resistance in interconnects on high density chips and also low leakage currents. Transmission electron microscopy has been used to study the microstructures associated with salicide interconnects in wafers prepared on design rules between 0.6 to 0.35 microns. Irregularities such as varying gate width, intergrowths of poly-silicon and polycrystallinity in titanium silicide were observed. Precipitation has not so far been noticed in pure or doped silica insulating layers.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/107323||ISSN:||0277786X||DOI:||10.1117/12.280546|
|Appears in Collections:||Staff Publications|
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