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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0925-4005(03)00186-2
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dc.titleA room temperature indium tin oxide/quartz crystal microbalance gas sensor for nitric oxide
dc.contributor.authorHu, J.
dc.contributor.authorZhu, F.
dc.contributor.authorZhang, J.
dc.contributor.authorGong, H.
dc.date.accessioned2014-10-29T08:41:35Z
dc.date.available2014-10-29T08:41:35Z
dc.date.issued2003-08-01
dc.identifier.citationHu, J., Zhu, F., Zhang, J., Gong, H. (2003-08-01). A room temperature indium tin oxide/quartz crystal microbalance gas sensor for nitric oxide. Sensors and Actuators, B: Chemical 93 (1-3) : 175-180. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-4005(03)00186-2
dc.identifier.issn09254005
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107254
dc.description.abstractNitric oxide (NO) gas sensor using a combination of indium tin oxide (ITO) and quartz crystal microbalance is fabricated. The sensor is made from the polished AT-cut quartz crystal on which the ITO thin film is deposited using radio frequency magnetron sputtering. The sensor is sensitive to NO gas at room temperature and avoids the problems related to elevated-temperature sensors. It is shown that the sensor has a distinct negative frequency shift of 110Hz within 600s when it is exposed to 60ppm of NO. The frequency-changing rate is also found to increase with NO concentration. The chemical status of elements on the ITO surface before and after NO adsorption is investigated by X-ray photoelectron spectroscopy (XPS). Possible gas sensing mechanisms are discussed. © 2003 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0925-4005(03)00186-2
dc.sourceScopus
dc.subjectGas sensing mechanisms
dc.subjectIndium tin oxide
dc.subjectQuartz crystal
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/S0925-4005(03)00186-2
dc.description.sourcetitleSensors and Actuators, B: Chemical
dc.description.volume93
dc.description.issue1-3
dc.description.page175-180
dc.description.codenSABCE
dc.identifier.isiut000184265500025
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