Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2053367
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dc.titleSurface stability and evolution of biaxially strained epitaxial thin films
dc.contributor.authorZhang, Y.W.
dc.date.accessioned2014-10-29T08:41:10Z
dc.date.available2014-10-29T08:41:10Z
dc.date.issued2005-09-19
dc.identifier.citationZhang, Y.W. (2005-09-19). Surface stability and evolution of biaxially strained epitaxial thin films. Applied Physics Letters 87 (12) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2053367
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107223
dc.description.abstractFirst-order perturbation analysis has been performed to investigate the stability and the fastest growth mode of a biaxially strained epitaxial thin film surface by stress-induced surface diffusion. It is found that the normalized critical wavelength along one principal direction depends on the Poisson's ratio of the film, and also the perturbed wavelength and stress level along the other principal direction. The fastest growth analysis shows that when the absolute value of the ratio of the two principal stresses deviates from unity, a gradual transition from nanoisland formation to nanowire formation occurs. The larger the deviation, the stronger the tendency for the formation of a nanowire; finite element simulations confirm the tendency. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2053367
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.2053367
dc.description.sourcetitleApplied Physics Letters
dc.description.volume87
dc.description.issue12
dc.description.page1-3
dc.description.codenAPPLA
dc.identifier.isiut000231907200032
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