Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(98)01367-4
Title: Pd-Ni thin films grown on porous Al2O3 substrates by metalorganic chemical vapor deposition for hydrogen sensing
Authors: Huang, L. 
Gong, H. 
Peng, D.
Meng, G.
Issue Date: 21-May-1999
Citation: Huang, L., Gong, H., Peng, D., Meng, G. (1999-05-21). Pd-Ni thin films grown on porous Al2O3 substrates by metalorganic chemical vapor deposition for hydrogen sensing. Thin Solid Films 345 (2) : 217-221. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(98)01367-4
Abstract: Pd-Ni thin films were grown on porous substrates by metalorganic chemical vapor deposition (MOCVD) using the Pd- and Ni-acetylacetonate mixed precursor. Porous α-Al2O3 disks with and without γ-Al2O3 top layer deposited by a sol-gel process were employed as substrates. The composition of the films was very close to the Pd/Ni ratio in the mixed precursor as shown by X-ray photoelectron spectroscopy (XPS) analysis. The microstructure and surface morphology of the Pd-Ni thin film was determined by using scanning electron microscope (SEM) and atomic force microscope (AFM). The porous substrates have a remarkable effect on the film morphology, which contributes to different hydrogen sensing properties. The deposited film on a porous α-Al2O3 substrate was porous and discontinuous due to the large pores of the substrate used, and the sensitivity to hydrogen is significantly larger than that of Pd-Ni thin film sensors reported in the literature. On the contrary, the deposited film on porous γ-Al2O3 surface with bright metallic mirror provided a more uniform and compact thin film, and the sensitivity to hydrogen is much lower than that of the film on porous α-Al2O3 and blisters are easily formed under hydrogen atmosphere.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/107163
ISSN: 00406090
DOI: 10.1016/S0040-6090(98)01367-4
Appears in Collections:Staff Publications

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