Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/107083
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dc.titleInternal Atomic Distortion and Layer Roughness of Epitaxial SiC Thin Films Studied by Short Wavelength X-Ray Diffraction
dc.contributor.authorXu, G.
dc.contributor.authorFeng, Z.C.
dc.date.accessioned2014-10-29T08:39:16Z
dc.date.available2014-10-29T08:39:16Z
dc.date.issued2000-02-28
dc.identifier.citationXu, G.,Feng, Z.C. (2000-02-28). Internal Atomic Distortion and Layer Roughness of Epitaxial SiC Thin Films Studied by Short Wavelength X-Ray Diffraction. Physical Review Letters 84 (9) : 1926-1929. ScholarBank@NUS Repository.
dc.identifier.issn00319007
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107083
dc.description.abstractEpitaxial silicon carbide thin films grown on a silicon substrate were examined by short wavelength (0.71 Å from a molybdenum anode) x-ray diffraction to study their atomic distortion and internal layer roughness. Up to 5 order Bragg peaks along (100) were measured and crystallographic structure factors were obtained. Electron density distributions along the surface normal were reconstructed via Fourier transform. In comparing to the ideal situation, it was found that, due to the lattice mismatch, the silicon atoms are no longer fixed on the same atomic plane, thus the corresponding electron distribution maxima were broadened. Also, the maxima for carbon atoms are flattened, indicating the randomized locations.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.sourcetitlePhysical Review Letters
dc.description.volume84
dc.description.issue9
dc.description.page1926-1929
dc.description.codenPRLTA
dc.identifier.isiutNOT_IN_WOS
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