Please use this identifier to cite or link to this item:
Title: In situ transmission electron microscopy of AIN growth by nitridation of (0001) α-Al2O3
Authors: Yeadon, M. 
Marshall, M.T.
Hamdani, F.
Pekin, S.
Morkoç, H.
Gibson, J.M.
Issue Date: 1998
Citation: Yeadon, M.,Marshall, M.T.,Hamdani, F.,Pekin, S.,Morkoç, H.,Gibson, J.M. (1998). In situ transmission electron microscopy of AIN growth by nitridation of (0001) α-Al2O3. Journal of Applied Physics 83 (5) : 2847-2850. ScholarBank@NUS Repository.
Abstract: Using a novel ultrahigh vacuum transmission electron microscope (TEM) with in situ reactive molecular beam epitaxy system, we report the successful synthesis of epitaxial A1N on the (0001) sapphire surface upon exposure to ammonia. The substrate, an electron transparent sapphire foil, was annealed in oxygen at high temperature to eliminate damage induced during preparation and to create large atomically flat regions. The sample was then held at 950 °C in flowing ammonia inside the microscope for 2 h during which periodic observations of microstructural development were made. We report direct observation of the formation of epitaxial AlN with the orientation relationship (0001)A1N//(0001)sub, [1010]A1N//[1120] sub and present both TEM and atomic force microscope images of the sample before and after nitridation. The results are consistent with a diffusion-limited reaction model involving transport of oxygen and nitrogen ions through the growing A1N epilayer between the free surface and the unreacted α-A12O3. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Nov 29, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.