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|Title:||High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD||Authors:||Wang, Y.
|Issue Date:||Nov-2000||Citation:||Wang, Y.,Gong, H. (2000-11). High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD. Advanced Materials 12 (22) : 285-288. ScholarBank@NUS Repository.||Abstract:||Stable p-type CuAlO2 thin films were prepared using plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD). The mechanism of p-type conductivity was illustrated.||Source Title:||Advanced Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/107063||ISSN:||09359648|
|Appears in Collections:||Staff Publications|
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