Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/107063
Title: High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD
Authors: Wang, Y. 
Gong, H. 
Issue Date: Nov-2000
Citation: Wang, Y.,Gong, H. (2000-11). High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD. Advanced Materials 12 (22) : 285-288. ScholarBank@NUS Repository.
Abstract: Stable p-type CuAlO2 thin films were prepared using plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD). The mechanism of p-type conductivity was illustrated.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/107063
ISSN: 09359648
Appears in Collections:Staff Publications

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