Please use this identifier to cite or link to this item:
|Title:||High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials||Authors:||Xu, G.
|Issue Date:||2000||Citation:||Xu, G.,Feng, Z.C. (2000). High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials. Materials Science Forum 338 : I/-. ScholarBank@NUS Repository.||Abstract:||The atomic distortion and internal layer roughness in epitaxial 3C- and 4H-SiC thin films and bulk 6H-SiC are studied by means of short wavelength X-ray diffraction using a 0.71 angstrom X-ray source from a molybdenum anode. Up to five order Bragg peaks along (100) were measured. Through the detailed theoretical calculation, the crystallographic structure factors were obtained. The electron density distributions along the surface normal were reconstructed via Fourier transform. Comparison with the ideal situation calculated from the atomic scattering factors was presented.||Source Title:||Materials Science Forum||URI:||http://scholarbank.nus.edu.sg/handle/10635/107061||ISSN:||02555476|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 21, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.